By replacing the stepper process into the imprint process to make etching-resistant patterns used for making PSS (Patterned Sapphire Substrate) structures to maximize the light extraction efficiency of the LED chips, we make the minute pattern hardly realizable by steppers. We provide the ICP etcher ability that can consistently etch the desired PSS shape onto a sapphire wafer using the resistant pattern.

• with PSS High efficiency light extraction by reflection from the surface of the PSS

• Optic device Due to total reflection, some part of the light cannot be extracted because of no patterned surface.

• Imprinted pattern

• etched pattern

To make the Si lens that is being used for image sensors or the IR sensors, we first need to go through the Si wafer etching process. In this process, we provide the etcher process ability where we can create a lens by etching the lens-shaped, etch-resistance to an Si wafer consistently. We make it possible to realize the uniform lens-shaped resistance pattern with only one process through the imprintation process following the PR reflow process that is used to realize the micro lens-shaped, etch-resistant pattern with the mold that has an engraved lens form.