Features
- Dual ICP Source(13.56MHz) optimized for large area
Dual ICP Source ensures uniformity in large area, enables currant control of center and edge for best uniformity, and provides stable uniformity by forming high density plasma
- Flexible processing allows control of gas center and edge ratio
Use of FRC(Flow ration controller) facilitates ratio control of mixed gas center and edge ratio for uniformity
- Face Down Chamber available
Particle control effect with world's first Face down processing; maximum production rate guaranteed with cleaning cycle extension
- Provides diverse TRAYS
Provides Aluminium and SiC Batch type TRAY in 4-inch, 6-inch, and 8-inch
Provide various platforms
- MAXIS300L
- MAXIS800L
- MAXIS980L
- MAXIS480L
- MAXIS480LD
- MAXIS480LDG
- MAXIS480LDP
Process Data
| PSS |  |
|---|---|
| GaN |  |
| GaAs |  |
| AlGaInP |  |
